HS50N06
HOMSEMI
2.28MB
N-channel mosfet. The HS50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resi
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HS50N06DA - N-channel 60V MOSFET
(HOMSEMI)
N channel 60V MOSFET
HS50N06DA
1. Description
The HS50N06DA is the N-Channel logic enhancement mode power field effect transistors are produced usin.
HS50N06PA - 60V Heatsink Planar N-Channel Power MOSFET
(Thinki Semiconductor)
HS50N06PA
HS50N06PA
Pb
Pb Free Plating Product
50A,60V Heatsink Planar N-Channel Power MOSFET
Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V •.
HS510 - Thyristor - SCR (Silicon-Controlled Rectifier)
(Hind Rectifiers Ltd)
t
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HS5104 - Infrared remote controller
(HuaXin)
HS5104
1.
HS5104
CMOS 38KHz IC ESD
2.
CMOS 2.5 - 5V /6HP+2CP
LED 38KHz
32 ESD
3.
3.1
Ver 1.0
IC,
32
1
6
Ver. 1.0
3.3
12 3∼79∼ 11
8 1213
1.
HS5131 - 8 Bit / 2.5uS ADC
(Sipex Corp)
.
HS5150 - High Speed 8-Bit ADC
(Hybrid Systems Corp)
.
HS5151 - Thick Film Chip Resistors
(Stackpole Electronics Inc)
SEI Electronics - Company Profile
• A Little History . . .
SEI Electronics started manufacturing resistors in 1928, as part of the Stackpole Carbon C.
HS517R - Omnipolar CMOS Output Hall Effect Switch
(ChipSourceTek)
HS517R
Omnipolar CMOS Output Hall Effect Switch
General Description
The HS517R Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS .
HS527 - OTP Encoder
(SilvanChip)
HS527 OTP Encoder
HS527 Description: (Compatible:EV1527,RT1527,FP1527)
HS527 is OTP Encoder utilizing CMOS technology process. HS527 hai a maximum of .
HS54095 - Silicon N Channel MOS FET
(Renesas)
HS54095
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 13.5 Ω typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25°C).
