HY1403 - N-Channel MOSFET

HOOYI

General Description

S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L Applications

Power Management for Inverter Systems.

Key Features

30V/42A, RDS(ON)= 10 mΩ (typ. ) @ VGS=10V.
100% EAS Guaranteed.
Super Low Gate Charge.
Excellent CdV/dt effect decline.
Advanced high cell density Trench technology.
Halogen - Free Device Available Pin.

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HY1403 n-channel mosfet by HOOYI - Datasheet Preview

Datasheet Details

Part number	HY1403
Manufacturer	HOOYI
File Size	5.60 MB
Description	N-Channel MOSFET
Datasheet	HY1403 Datasheet

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Other Datasheets by HOOYI

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HY1403D	N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY1403D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/42A, RDS(ON)= 10 mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • Halogen - Free Device Available Pin Description S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L Applications • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S DUS HY1403 HY1403 HY1403 YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G Package Code D : TO-252-2L S : TO-251-3L Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.