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HY1403V - N-Channel Enhancement Mode MOSFET

General Description

GDS TO-252-2L GDS TO-251-3L GDS TO-251-3S Applications z Switching Application z Power Management for DC/DC Ordering and Marking Information N-Channel MOSFET D U V HY1403 HY1403 HY1403 YYXXXJWW G YYXXXJWW G YYXXXJWW G Package Code D : TO-252-2L V: TO-251-3S Date Code YYXXX WW U : TO-251-

Key Features

  • z 30V/42A RDS(ON) = 10 mΩ(typ. ) @VGS =- 10V RDS(ON) = 14 mΩ(typ. ) @VGS = -4.5V z 100% Avalanche Tested z Reliable and Rugged z Halogen Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number HY1403V
Manufacturer HUAYI
File Size 725.20 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1403V Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY1403D/U/V N-Channel Enhancement Mode MOSFET Features z 30V/42A RDS(ON) = 10 mΩ(typ.) @VGS =- 10V RDS(ON) = 14 mΩ(typ.) @VGS = -4.5V z 100% Avalanche Tested z Reliable and Rugged z Halogen Free and Green Devices Available (RoHS Compliant) Pin Description GDS TO-252-2L GDS TO-251-3L GDS TO-251-3S Applications z Switching Application z Power Management for DC/DC Ordering and Marking Information N-Channel MOSFET D U V HY1403 HY1403 HY1403 YYXXXJWW G YYXXXJWW G YYXXXJWW G Package Code D : TO-252-2L V: TO-251-3S Date Code YYXXX WW U : TO-251-3L Assembly Material G : Halogen Free Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-Nation finish;which are fully compliant with RoHS.