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HY1403P - N-Channel MOSFET

General Description

GDS TO-220FB-3L Ordering and Marking Information N-Channel MOSFET P HY1403 YYXXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish

Key Features

  • z 30V/44A RDS(ON)=9.6mΩ(typ. ) @VGS = 10V z 100% avalanche tested z Excellent CdV/dt effect decline z /HDG)UHH Device Available.

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Datasheet Details

Part number HY1403P
Manufacturer HOOYI
File Size 514.88 KB
Description N-Channel MOSFET
Datasheet download datasheet HY1403P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY1403P Features z 30V/44A RDS(ON)=9.6mΩ(typ.) @VGS = 10V z 100% avalanche tested z Excellent CdV/dt effect decline z /HDG)UHH Device Available Applications z Switching Application z Power Management for DC/DC N-Channel Enhancement Mode MOSFET Pin Description GDS TO-220FB-3L Ordering and Marking Information N-Channel MOSFET P HY1403 YYXXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.