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HY1403U - N-Channel MOSFET

Download the HY1403U datasheet PDF. This datasheet also covers the HY1403 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L Applications

Power Management for Inverter Systems.

Key Features

  • 30V/42A, RDS(ON)= 10 mΩ (typ. ) @ VGS=10V.
  • 100% EAS Guaranteed.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline.
  • Advanced high cell density Trench technology.
  • Halogen - Free Device Available Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY1403-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY1403U
Manufacturer HOOYI
File Size 5.60 MB
Description N-Channel MOSFET
Datasheet download datasheet HY1403U Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY1403D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/42A, RDS(ON)= 10 mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • Halogen - Free Device Available Pin Description S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L Applications • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S DUS HY1403 HY1403 HY1403 YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G Package Code D : TO-252-2L S : TO-251-3L Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.