HY1403S Datasheet | HOOYI

HY1403D/U/S N-Channel Enhancement Mode MOSFET Features - 30V/42A, RDS(ON)= 10 mΩ (typ.) @ VGS=10V - 100% EAS Guaranteed - Super Low Gate Charge - Excellent Cd V/dt effect decline - Advanced high cell density Trench technology - Halogen - Free Device Available Pin Description TO-252-2L TO-251-3L TO-251-3L Applications - Power Management for Inverter Systems. G N-Channel MOSFET Ordering and Marking Information DUS HY1403 HY1403 HY1403 YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G Package Code D : TO-252-2L S : TO-251-3L Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish; which are fully pliant with Ro HS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free...