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HYG012N03LR1B - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HYG012N03LR1B, a member of the HYG012N03LR1P N-Channel Enhancement Mode MOSFET family.

Description

TO-220FB-3L TO-263-2L Ordering and Marking Information N-Channel MOSFET P G012N03 XYMXXXXXX B G012N03 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation fi

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Datasheet Details

Part number HYG012N03LR1B
Manufacturer HOOYI
File Size 1.30 MB
Description N-Channel Enhancement Mode MOSFET
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HYG012N03LR1P/B N-Channel Enhancement Mode MOSFET Feature  30V/250A RDS(ON)= 1.2 mΩ (typ.) @VGS = 10V RDS(ON)= 1.4 mΩ (typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Battery management Pin Description TO-220FB-3L TO-263-2L Ordering and Marking Information N-Channel MOSFET P G012N03 XYMXXXXXX B G012N03 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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