HBFP-0420 Datasheet (HP) - High Performance Isolated Collector Silicon Bipolar Transistor

HBFP-0420, High Performance Isolated Collector Silicon Bipolar Transistor

Hewlett Packard’s HBFP-0420 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead SC-70 (SOT-343) surface mount plastic package.

03 Pin Configuration Base Emitter HBFP-0420 provides an associated gain of 17 dB, noise figure of 1.1 dB, and P1dB of 12 dBm

HBFP-0420 Features

* Ideal for High Gain, Low Noise Applications

* Transition Frequency fT = 25 GHz

* Typical Performance at 1.8 GHz Associated Gain of 17 dB and Noise Figure of 1.1 dB at 2 V and 5 mA P1dB of 12 dBm at 2 V and 20 mA

* Can be Used Without Impedance Matching Applications