* High Breakdown Voltage
* Low C-E Saturation Voltage
* High Cutoff Frequency
* High Current Gain TO-126ML Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Diss
HBF4522D
Hi-Sincerity Mocroelectronics
32.18 KB
Npn triple diffusion planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6602 Issued Date : 1993.03.15 Revised Date : 2002.02.20 Page No. : 1/3 HBF4522D NPN TRIPLE DIFFUSI.
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