HBF4522D, HBF4522D_Hi - NPN TRIPLE DIFFUSION PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Datasheet Details

Part number	HBF4522D, HBF4522D_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	32.18 KB
Description	NPN TRIPLE DIFFUSION PLANAR TRANSISTOR
Datasheet	HBF4522D_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: HBF4522D, HBF4522D_Hi. Please refer to the document for exact specifications by model.

HBF4522D is designed for use in the monitor dynamic focus circuit.

High Breakdown Voltage.
Low C-E Saturation Voltage.
High Cutoff Frequency.
High Current Gain TO-126ML Absolute Maximum Ratings (Ta=25°C).
Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1.5 W Total Power Dissipation (Tc=25°C) 20 W.
Maximum Voltages and Currents BVCBO Collector to Base Voltage 550 V BVCEO Collector to Emitter Voltage.

📁 HBF4522D Similar Datasheet

HBFP-0420 - High Performance Isolated Collector Silicon Bipolar Transistor (HP)

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 23, 2005 |