CS6J70A3-G Datasheet - HUAJING MICROELECTRONICS

CS6J70A3-G Silicon N-Channel Power MOSFET

CS6J70 A3-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher ef.

CS6J70A3-G Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： ○R 700 V 6A 94 W 0.95 Ω Symbol VDSS ID IDMa1 VGSS EAS a2 dv/dt

CS6J70A3-G Datasheet (351.18 KB)