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CS6J70B3-G Datasheet - HUAJING MICROELECTRONICS

Silicon N-Channel Power MOSFET

CS6J70B3-G Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： ○R 700 V 6A 94 W 0.95 Ω Symbol VDSS ID IDMa1 VGSS EAS a2 dv/dt a3 PD TJ，Tstg T

CS6J70B3-G General Description

CS6J70 B3-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher ef.

CS6J70B3-G Datasheet (352.09 KB)

Preview of CS6J70B3-G PDF

Datasheet Details

Part number:

CS6J70B3-G

Manufacturer:

HUAJING MICROELECTRONICS

File Size:

352.09 KB

Description:

Silicon n-channel power mosfet.

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CS6J70B3-G Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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