CS6J70B3-G Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

Description

Silicon N-Channel Power MOSFET CS6J70 B3-G General .
CS6J70 B3-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switchin.

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Datasheet Specifications

Part number: CS6J70B3-G
Manufacturer: HUAJING MICROELECTRONICS
File Size: 352.09 KB
Datasheet: CS6J70B3-G-HUAJINGMICROELECTRONICS.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： ○R 700 V 6A 94 W 0.95 Ω Symbol VDSS ID IDMa1 VGSS EAS a2 dv/dt a3 PD TJ，Tstg TL Parameter Drain-to-Source Voltage(VGS=0V) Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse A

CS6J70B3-G Distributors

📁 Related Datasheet

CS6-04 CS6-06 CS6-07 CS6-08 CS60 CS60-010

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CS6J70B3-G Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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