HYG006N04LS1B6 Datasheet, Mosfet, HUAYI

PDF File Details

Part number:

HYG006N04LS1B6

Manufacturer:

HUAYI

File Size:

1.37MB

Download:

📄 Datasheet

Description:

Single n-channel enhancement mode mosfet. Pin 1 Pin 7 TO-263-6L Applications

  • Load Switch
  • Lithium battery protect board Pin 1 Pin 2,3,5,6,7 Single N-Ch

  • Datasheet Preview: HYG006N04LS1B6 📥 Download PDF (1.37MB)
    Page 2 of HYG006N04LS1B6 Page 3 of HYG006N04LS1B6

    HYG006N04LS1B6 Application

    • Applications
    • Load Switch
    • Lithium battery protect board Pin 1 Pin 2,3,5,6,7 Single N-Channel MOSFET Ordering and Marking Inform

    TAGS

    HYG006N04LS1B6
    Single
    N-Channel
    Enhancement
    Mode
    MOSFET
    HUAYI

    📁 Related Datasheet

    HYG010N06NS1TA - N-Channel Enhancement Mode MOSFET (HUAYI)
    HYG010N06NS1TA Feature  60V/465A RDS(ON)=0.75 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS.

    HYG013N03LS1C2 - Single N-Channel MOSFET (HUAYI)
    HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  30V/150A RDS(ON)= 1.3mΩ (typ.) @VGS = 10V RDS(ON)= 2.0mΩ (typ.) @VGS =.

    HYG013N03LS1C2 - Single N-Channel Enhancement Mode MOSFET (ChipSourceTek)
    HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description  30V/150A RDS(ON)= 1.3mΩ (typ.) @VGS = 10V DDDD DDDD.

    HYG015N03LS1C2 - Single N-Channel Enhancement Mode MOSFET (ChipSourceTek)
    Single N-Channel Enhancement Mode MOSFET HYG015N03LS1C2 Feature HYG015N03LS1C2 Pin Description  30V/130A DDDD DDDD RDS(ON)= 1.4mΩ (typ.) @ VGS .

    HYG022N03LQ1D - N-Channel MOSFET (HUAYI)
    HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.

    HYG022N03LQ1U - N-Channel MOSFET (HUAYI)
    HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.

    HYG022N03LQ1V - N-Channel MOSFET (HUAYI)
    HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.

    HYG023N03LR1C2 - N-Channel MOSFET (HUAYI)
    HYG023N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  30V/125A RDS(ON)= 1.5mΩ (typ.) @VGS = 10V RDS(ON)= 2.1mΩ (typ.) @VGS =.

    HYG023N03LR1D - N-Channel Enhancement Mode MOSFET (HUAYI)
    HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V  100% Avalanc.

    HYG023N03LR1U - N-Channel Enhancement Mode MOSFET (HUAYI)
    HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V  100% Avalanc.

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts