HYG006N04LS1B6
HUAYI
1.37MB
Single n-channel enhancement mode mosfet. Pin 1 Pin 7 TO-263-6L Applications
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HYG010N06NS1TA - N-Channel Enhancement Mode MOSFET
(HUAYI)
HYG010N06NS1TA
Feature
60V/465A RDS(ON)=0.75 mΩ(typ.)@VGS = 10V
100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available
(RoHS.
HYG013N03LS1C2 - Single N-Channel MOSFET
(HUAYI)
HYG013N03LS1C2
Single N-Channel Enhancement Mode MOSFET
Feature Description
30V/150A RDS(ON)= 1.3mΩ (typ.) @VGS = 10V RDS(ON)= 2.0mΩ (typ.) @VGS =.
HYG013N03LS1C2 - Single N-Channel Enhancement Mode MOSFET
(ChipSourceTek)
HYG013N03LS1C2
Single N-Channel Enhancement Mode MOSFET
Feature Description
Pin Description
30V/150A RDS(ON)= 1.3mΩ (typ.) @VGS = 10V
DDDD
DDDD.
HYG015N03LS1C2 - Single N-Channel Enhancement Mode MOSFET
(ChipSourceTek)
Single N-Channel Enhancement Mode MOSFET
HYG015N03LS1C2 Feature
HYG015N03LS1C2 Pin Description
30V/130A
DDDD
DDDD
RDS(ON)= 1.4mΩ (typ.) @ VGS .
HYG022N03LQ1D - N-Channel MOSFET
(HUAYI)
HYG022N03LQ1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V
z 100% Avala.
HYG022N03LQ1U - N-Channel MOSFET
(HUAYI)
HYG022N03LQ1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V
z 100% Avala.
HYG022N03LQ1V - N-Channel MOSFET
(HUAYI)
HYG022N03LQ1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V
z 100% Avala.
HYG023N03LR1C2 - N-Channel MOSFET
(HUAYI)
HYG023N03LR1C2
Single N-Channel Enhancement Mode MOSFET
Feature Description
30V/125A RDS(ON)= 1.5mΩ (typ.) @VGS = 10V RDS(ON)= 2.1mΩ (typ.) @VGS =.
HYG023N03LR1D - N-Channel Enhancement Mode MOSFET
(HUAYI)
HYG023N03LR1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V
100% Avalanc.
HYG023N03LR1U - N-Channel Enhancement Mode MOSFET
(HUAYI)
HYG023N03LR1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V
100% Avalanc.