• Part: HYG053N10NS1C2
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 383.77 KB
Download HYG053N10NS1C2 Datasheet PDF
HUAYI
HYG053N10NS1C2
Feature - 100V/95A RDS(ON)=4.6 mΩ(typ.)@VGS = 10V - 100% Avalanche Tested - Reliable and Rugged - Halogen-Free Devices Available (Ro HS pliant) Applications - Switching application - Power management for inverter systems - Battery management Pin Description DDDD DDDD SSSG Pin1 GSSS PDFN5- 6-8L N-Channel MOSFET Ordering and Marking Information C2 G053N10 XYMXXXXXX Package Code C2 : PDFN5- 6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements,...