HYG053N10NS1P
Key Features
- 100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V
- 100% Avalanche Tested
- Reliable and Rugged
- Halogen-Free Devices Available (RoHS pliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L
- Part: HYG053N10NS1P
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: HUAYI
- Size: 406.93 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| HYG053N10NS1D | ChipSourceTek | N-Channel MOSFET |
| HYG053N10NS1U | HOOYI | N-Channel Enhancement Mode MOSFET |
| HYG053N10NS1D | HOOYI | N-Channel Enhancement Mode MOSFET |
| HYG053N10NS1V | ChipSourceTek | N-Channel MOSFET |
| HYG053N10NS1U | ChipSourceTek | N-Channel MOSFET |
| HYG053N10NS1V | HOOYI | N-Channel Enhancement Mode MOSFET |