Datasheet Details
| Part number | HYG053N10NS1P |
|---|---|
| Manufacturer | HUAYI |
| File Size | 406.93 KB |
| Description | N-Channel MOSFET |
| Datasheet | HYG053N10NS1P-HUAYI.pdf |
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Overview: HYG053N10NS1P/B Feature 100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET.
| Part number | HYG053N10NS1P |
|---|---|
| Manufacturer | HUAYI |
| File Size | 406.93 KB |
| Description | N-Channel MOSFET |
| Datasheet | HYG053N10NS1P-HUAYI.pdf |
|
|
|
TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Battery management N-Channel MOSFET Ordering and Marking Information P G053N10 XYMXXXXXX B G053N10 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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HYG053N10NS1C2 | N-Channel Enhancement Mode MOSFET | ChipSourceTek |
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HYG053N10NS1D | N-Channel MOSFET | ChipSourceTek |
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HYG053N10NS1D | N-Channel Enhancement Mode MOSFET | HOOYI |
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HYG053N10NS1U | N-Channel MOSFET | ChipSourceTek |
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HYG053N10NS1U | N-Channel Enhancement Mode MOSFET | HOOYI |
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