HYG053N10NS1C2
Key Features
- 100V/95A RDS(ON)=4.6 mΩ(typ.)@VGS = 10V
- 100% Avalanche Tested
- Reliable and Rugged
- Halogen-Free Devices Available (RoHS pliant)
Applications
- Power management for inverter systems
- Part: HYG053N10NS1C2
- Description: N-Channel Enhancement Mode MOSFET
- Category: MOSFET
- Manufacturer: HUAYI
- Size: 383.77 KB