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HYG053N10NS1C2 Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG053N10NS1C2 N-Channel Enhancement Mode MOSFET Feature  100V/95A RDS(ON)=4.6 mΩ(typ.

Datasheet Details

Part number HYG053N10NS1C2
Manufacturer HUAYI
File Size 383.77 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG053N10NS1C2-HUAYI.pdf

General Description

DDDD DDDD SSSG Pin1 GSSS PDFN5*6-8L N-Channel MOSFET Ordering and Marking Information C2 G053N10 XYMXXXXXX Package Code C2 : PDFN5*6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HYG053N10NS1C2 Distributor