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HYG053N10NS1C2 - N-Channel Enhancement Mode MOSFET

General Description

DDDD DDDD SSSG Pin1 GSSS PDFN5 6-8L N-Channel MOSFET Ordering and Marking Information C2 G053N10 XYMXXXXXX Package Code C2 : PDFN5 6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;whic

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Datasheet Details

Part number HYG053N10NS1C2
Manufacturer HUAYI
File Size 383.77 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG053N10NS1C2 Datasheet

Full PDF Text Transcription (Reference)

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HYG053N10NS1C2 N-Channel Enhancement Mode MOSFET Feature  100V/95A RDS(ON)=4.6 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) Applications  Switching application  Power management for inverter systems  Battery management Pin Description DDDD DDDD SSSG Pin1 GSSS PDFN5*6-8L N-Channel MOSFET Ordering and Marking Information C2 G053N10 XYMXXXXXX Package Code C2 : PDFN5*6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.