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HYG053N10NS1V - N-Channel Enhancement Mode MOSFET

Download the HYG053N10NS1V datasheet PDF. This datasheet also covers the HYG053N10NS1D variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

G DS TO-252-2L G DS TO-251-3L G DS TO-251-3S N-Channel MOSFET Ordering and Marking Information D G053N10 XYMXXXXXX U G053N10 XYMXXXXXX V G053N10 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die att

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HYG053N10NS1D-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG053N10NS1V
Manufacturer HOOYI
File Size 471.47 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG053N10NS1V Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HYG053N10NS1D/U/V Feature  100V/95A RDS(ON)=5.2mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free DevicesAvailable (RoHS Compliant) Applications  Switching Application  Motor control and drive  Battery management N-Channel Enhancement Mode MOSFET Pin Description G DS TO-252-2L G DS TO-251-3L G DS TO-251-3S N-Channel MOSFET Ordering and Marking Information D G053N10 XYMXXXXXX U G053N10 XYMXXXXXX V G053N10 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.