HYG053N10NS1V
Key Features
- 100V/95A RDS(ON)=5.2mΩ(typ.)@VGS = 10V
- 100% Avalanche Tested
- Reliable and Rugged
- Halogen-Free DevicesAvailable (RoHS pliant)
Applications
- Motor control and drive
- Part: HYG053N10NS1V
- Description: N-Channel Enhancement Mode MOSFET
- Category: MOSFET
- Manufacturer: HOOYI
- Size: 471.47 KB