G DS TO-252-2L
G DS TO-251-3L
G DS TO-251-3S
N-Channel MOSFET
Ordering and Marking Information
D
G053N10
XYMXXXXXX
U
G053N10
XYMXXXXXX
V
G053N10
XYMXXXXXX
Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S
Date Code XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die att
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
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HYG053N10NS1D/U/V
Feature
100V/95A RDS(ON)=5.2mΩ(typ.)@VGS = 10V
100% Avalanche Tested Reliable and Rugged Halogen-Free DevicesAvailable
(RoHS Compliant)
Applications
Switching Application Motor control and drive Battery management
N-Channel Enhancement Mode MOSFET Pin Description
G DS TO-252-2L
G DS TO-251-3L
G DS TO-251-3S
N-Channel MOSFET
Ordering and Marking Information
D
G053N10
XYMXXXXXX
U
G053N10
XYMXXXXXX
V
G053N10
XYMXXXXXX
Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S
Date Code XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
HYG053N10NS1D Datasheet
