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HYG053N10NS1D Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Overview: HYG053N10NS1D/U/V Feature  100V/95A RDS(ON)=5.2mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free DevicesAvailable (RoHS Compliant) Applications  Switching Application  Motor control and.

Datasheet Details

Part number HYG053N10NS1D
Manufacturer HOOYI
File Size 471.47 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG053N10NS1D-HOOYI.pdf

General Description

G DS TO-252-2L G DS TO-251-3L G DS TO-251-3S N-Channel MOSFET Ordering and Marking Information D G053N10 XYMXXXXXX U G053N10 XYMXXXXXX V G053N10 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

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