HYG053N10NS1D
Key Features
- 100V/95A RDS(ON)=5.2mΩ(typ.)@VGS = 10V
- 100% Avalanche Tested
- Reliable and Rugged
- Halogen-Free DevicesAvailable (RoHS pliant)
- Part: HYG053N10NS1D
- Description: N-Channel Enhancement Mode MOSFET
- Category: MOSFET
- Manufacturer: HOOYI
- Size: 471.47 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| HYG053N10NS1V | ChipSourceTek | N-Channel MOSFET |
| HYG053N10NS1U | ChipSourceTek | N-Channel MOSFET |
| HYG053N10NS1C2 | HUAYI | N-Channel Enhancement Mode MOSFET |