• Part: HYG055N08NS1C2
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 629.78 KB
Download HYG055N08NS1C2 Datasheet PDF
HUAYI
HYG055N08NS1C2
Feature - 80V/85A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V - 100% Avalanche Tested - Reliable and Rugged - Halogen-Free Devices Available (Ro HS pliant) Applications - Switching application - Power management for inverter systems - Motor control Pin Description DDDD DDDD SSSG Pin1 PPAK5- 6-8L GS S S N-Channel MOSFET Ordering and Marking Information C2 G055N08 XYMXXXXXX Package Code C2 : PPAK5- 6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements,...