G5852-103 Datasheet, photodiode, Hamamatsu Corporation

G5852-103 Features

• Photodiode Applications l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B3 mm s Specifications / Absolute maxi

PDF File Details

Part number:

G5852-103

Manufacturer:

Hamamatsu Corporation

File Size:

255.70kb

Download:

📄 Datasheet

Description:

Ingaas pin photodiode.

G5852-103 Application

• Applications l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B

TAGS

G5852-103

Hamamatsu Corporation

📁 Related Datasheet

G5852-11 - InGaAs PIN photodiode (Hamamatsu Corporation)
PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type (up to 2.1 µm) Features Applications l Cut-off wavelength: 2.1 µm l .

G5852-13 - InGaAs PIN photodiode (Hamamatsu Corporation)
PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type (up to 2.1 µm) Features Applications l Cut-off wavelength: 2.1 µm l .

G5852-203 - InGaAs PIN photodiode (Hamamatsu Corporation)
PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type (up to 2.1 µm) Features Applications l Cut-off wavelength: 2.1 µm l .

G5852-21 - InGaAs PIN photodiode (Hamamatsu Corporation)
PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type (up to 2.1 µm) Features Applications l Cut-off wavelength: 2.1 µm l .

G5852-23 - InGaAs PIN photodiode (Hamamatsu Corporation)
PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type (up to 2.1 µm) Features Applications l Cut-off wavelength: 2.1 µm l .

G5851-103 - InGaAs PIN photodiode (Hamamatsu Corporation)
.

G5851-11 - InGaAs PIN photodiode (Hamamatsu Corporation)
.

G5851-13 - InGaAs PIN photodiode (Hamamatsu Corporation)
.

G5851-203 - InGaAs PIN photodiode (Hamamatsu Corporation)
.

G5851-21 - InGaAs PIN photodiode (Hamamatsu Corporation)
.