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G5852-11 InGaAs PIN photodiode

G5852-11 Description

PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type (up to 2.1 µm) .

G5852-11 Applications

* l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B3 mm s Specifications / Absolute maximum ratings Dim ensional Package outline Active area (mm) φ0.3 φ0.5 φ1 φ3 φ0.3 φ1 φ3 φ0.3 φ1 φ3 l Gas analyzer l Water content

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Datasheet Details

Part number
G5852-11
Manufacturer
Hamamatsu Corporation
File Size
255.70 KB
Datasheet
G5852-11_HamamatsuCorporation.pdf
Description
InGaAs PIN photodiode

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InGaAs PIN photodiode Hamamatsu Corporation
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