S9972 Datasheet, Sensor, Hamamatsu Corporation

S9972 Features

  • Sensor Applications l 1024 (H) × 124 (V) and 1024 (H) × 252 (V) pixel format l Pixel size: 24 × 24 µm l Line/pixel binning l 100 % fill factor l Wide dynamic range l Low dark signal l Low re

PDF File Details

Part number:

S9972

Manufacturer:

Hamamatsu Corporation

File Size:

202.41kb

Download:

📄 Datasheet

Description:

Ccd area image sensor. Symbol Description 1 RG Reset gate RG Reset

Datasheet Preview: S9972 📥 Download PDF (202.41kb)
Page 2 of S9972 Page 3 of S9972

S9972 Application

  • Applications By using the binning operation, S9972/S9973 series can be used as a linear image sensor having a long aperture in the direction of the

TAGS

S9972
CCD
area
image
sensor
Hamamatsu Corporation

📁 Related Datasheet

S9970 - CCD area image sensor (Hamamatsu Corporation)
IMAGE SENSOR CCD area image sensor .. S9970/S9971 series Low dark signal · low readout noise/front-illuminated FFT-CCD S9970/S9971.

S9971 - CCD area image sensor (Hamamatsu Corporation)
IMAGE SENSOR CCD area image sensor .. S9970/S9971 series Low dark signal · low readout noise/front-illuminated FFT-CCD S9970/S9971.

S9973 - CCD area image sensor (Hamamatsu Corporation)
IMAGE SENSOR CCD area image sensor .. S9972/S9973 series Front-illuminated FFT-CCD, high IR sensitivity S9972/S9973 series are fam.

S9978 - CCD area image sensor (Hamamatsu Corporation)
IMAGE SENSOR CCD area image sensor .. S9978 Front-illuminated FFT-CCDs, high IR sensitivity S9978 is FFT-CCD area image sensor spe.

S9979 - CCD area image sensor (Hamamatsu Corporation)
IMAGE SENSOR CCD area image sensor .. S9979 TDI operation / large active area CCD S9979 is a FFT-CCD area image sensor specificall.

S99-50214 - 512-Mbit (32M x 16-bit) 1.8V Flash Memory (Cypress Semiconductor)
PRELIMINARY S99-50214 512 Mbit (32M x 16 bit) 1.8 V MirrorBit® Flash Features  Single 1.8 V read/program/erase  90 nm MirrorBit® Technology  Sim.

S9004P2CT - 30A SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
S9004P2CT 30A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power L.

S9005P2CT - 20A SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
S9005P2CT 20A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power L.

S9011 - NPN Transistor (WEJ)
RoHS S9011 S9011 F EATURE Pow er dissipation P CM: TRANSISTOR (NPN) TO-92 1 . EMITTER 2. BASE 0 .31 W (Tamb=25℃) 3. COLLECTOR Co llector curren.

S9011 - NPN Silicon Epitaxial Planar Transistor (BL)
BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z Collec tor Current.(IC= 30mA) z Power dissipation.(PC=200mW) Production speci.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts