S9978
Hamamatsu Corporation
193.02kb
Ccd area image sensor. Reset gate Reset drain Output source Output transistor drain Output gate Summing gate CCD horizontal register clock-2 No connection C
TAGS
📁 Related Datasheet
S9970 - CCD area image sensor
(Hamamatsu Corporation)
IMAGE SENSOR
CCD area image sensor
..
S9970/S9971 series
Low dark signal · low readout noise/front-illuminated FFT-CCD
S9970/S9971.
S9971 - CCD area image sensor
(Hamamatsu Corporation)
IMAGE SENSOR
CCD area image sensor
..
S9970/S9971 series
Low dark signal · low readout noise/front-illuminated FFT-CCD
S9970/S9971.
S9972 - CCD area image sensor
(Hamamatsu Corporation)
IMAGE SENSOR
CCD area image sensor
..
S9972/S9973 series
Front-illuminated FFT-CCD, high IR sensitivity
S9972/S9973 series are fam.
S9973 - CCD area image sensor
(Hamamatsu Corporation)
IMAGE SENSOR
CCD area image sensor
..
S9972/S9973 series
Front-illuminated FFT-CCD, high IR sensitivity
S9972/S9973 series are fam.
S9979 - CCD area image sensor
(Hamamatsu Corporation)
IMAGE SENSOR
CCD area image sensor
..
S9979
TDI operation / large active area CCD
S9979 is a FFT-CCD area image sensor specificall.
S99-50214 - 512-Mbit (32M x 16-bit) 1.8V Flash Memory
(Cypress Semiconductor)
PRELIMINARY
S99-50214
512 Mbit (32M x 16 bit) 1.8 V MirrorBit® Flash
Features
Single 1.8 V read/program/erase 90 nm MirrorBit® Technology
Sim.
S9004P2CT - 30A SCHOTTKY BARRIER RECTIFIER
(Diodes Incorporated)
S9004P2CT
30A SCHOTTKY BARRIER RECTIFIER Features
· · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power L.
S9005P2CT - 20A SCHOTTKY BARRIER RECTIFIER
(Diodes Incorporated)
S9005P2CT
20A SCHOTTKY BARRIER RECTIFIER Features
· · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power L.
S9011 - NPN Transistor
(WEJ)
RoHS
S9011
S9011
F EATURE Pow er dissipation P CM:
TRANSISTOR (NPN)
TO-92
1 . EMITTER
2. BASE
0 .31 W (Tamb=25℃)
3. COLLECTOR
Co llector curren.
S9011 - NPN Silicon Epitaxial Planar Transistor
(BL)
BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Collec tor Current.(IC= 30mA) z Power dissipation.(PC=200mW)
Production speci.