H4422S, H4422S_Hi Datasheet - Hi-Sincerity Mocroelectronics

H4422S N-Channel Enhancement-Mode MOSFET

H4422S Features

* RDS(on)=13.5mΩ@VGS=10V, ID=11A

* RDS(on)=24mΩ@VGS=4.5V, ID=5A

* Advanced trench process technology

* High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25oC

H4422S_Hi-SincerityMocroelectronics.pdf

H4422S Datasheet Preview — This datasheet PDF includes multiple part numbers: H4422S, H4422S_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

H4422S, H4422S_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

169.22 KB

Description:

N-channel enhancement-mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: H4422S, H4422S_Hi.
Please refer to the document for exact specifications by model.

H4422S Distributor

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H4422S H4422S_Hi N-Channel Enhancement-Mode MOSFET Hi-Sincerity Mocroelectronics