H4435S, H4435S_Hi Datasheet - Hi-Sincerity Mocroelectronics

H4435S P-Channel Enhancement-Mode MOSFET

H4435S Features

* RDS(on)=20mΩ@VGS=-10V, ID=-9.1A

* RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A

* Advanced trench process technology

* High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA

H4435S_Hi-SincerityMocroelectronics.pdf

H4435S Datasheet Preview — This datasheet PDF includes multiple part numbers: H4435S, H4435S_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

H4435S, H4435S_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

170.63 KB

Description:

P-channel enhancement-mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: H4435S, H4435S_Hi.
Please refer to the document for exact specifications by model.

H4435S Distributor

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TAGS

H4435S H4435S_Hi P-Channel Enhancement-Mode MOSFET Hi-Sincerity Mocroelectronics