H4435S Datasheet, Mosfet, Hi-Sincerity Mocroelectronics

H4435S Features

  • Mosfet
  • RDS(on)=20mΩ@VGS=-10V, ID=-9.1A
  • RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A
  • Advanced trench process technology
  • High Density Cell Design for Ultra Low On-Res

PDF File Details

Part number:

H4435S

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

170.63kb

Download:

📄 Datasheet

Description:

P-channel enhancement-mode mosfet.

Datasheet Preview: H4435S 📥 Download PDF (170.63kb)
Page 2 of H4435S Page 3 of H4435S

H4435S Application

  • Applications or systems.
  • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or applicatio

TAGS

H4435S
P-Channel
Enhancement-Mode
MOSFET
Hi-Sincerity Mocroelectronics

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