H4435S Datasheet, Mosfet, Hi-Sincerity Mocroelectronics

H4435S Features

• Mosfet
• RDS(on)=20mΩ@VGS=-10V, ID=-9.1A
• RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Res

PDF File Details

Part number:

H4435S

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

170.63kb

Download:

📄 Datasheet

Description:

P-channel enhancement-mode mosfet.

H4435S Application

• Applications or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or applicatio

TAGS

H4435S

Hi-Sincerity Mocroelectronics

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