H50N03J Features
* RDS(on)=6mΩ@VGS=10V, ID=30A
* RDS(on)=9mΩ@VGS=4.5V, ID=30A
* Advanced trench process technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for DC/DC Converters and Motor Drivers
* Fully Characterized Avalanche Voltage
H50N03J_Hi-SincerityMocroelectronics.pdf
Datasheet Details
H50N03J, H50N03J_Hi
Hi-Sincerity Mocroelectronics
92.38 KB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: H50N03J, H50N03J_Hi.
Please refer to the document for exact specifications by model.
H50N03J Distributor
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