H50N03J Datasheet, Mosfet, Hi-Sincerity Mocroelectronics

H50N03J Features

• Mosfet
• RDS(on)=6mΩ@VGS=10V, ID=30A
• RDS(on)=9mΩ@VGS=4.5V, ID=30A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance

PDF File Details

Part number:

H50N03J

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

92.38kb

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📄 Datasheet

Description:

N-channel mosfet.

H50N03J Application

• Applications or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or applicatio

TAGS

H50N03J

Hi-Sincerity Mocroelectronics

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