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H6968S, H6968CS_Hi Dual N-Channel MOSFET

H6968S Description

www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200510 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No.: 1/4 H69.

H6968S Features

* RDS(on)=32mΩ@VGS=2.5V, ID=5.5A
* RDS(on)=24mΩ@VGS=4.5V, ID=6.5A
* Advanced Trench Process Technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for Li ion Battery Packs Use
* Designed for Battery Switch Appliactions

H6968S Applications

* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel:

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This datasheet PDF includes multiple part numbers: H6968S, H6968CS_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H6968S, H6968CS_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
78.98 KB
Datasheet
H6968CS_Hi-SincerityMocroelectronics.pdf
Description
Dual N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: H6968S, H6968CS_Hi.
Please refer to the document for exact specifications by model.

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Dual N-Channel MOSFET Hi-Sincerity Mocroelectronics
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