* RDS(on)=60mΩ@VGS=-10V, ID=-5.3A
* RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A
* Advanced Trench Process Technology
* High Density Cell Design for Ultra Low On-Resistance
* Fully Characterized Avalanche Voltage and Current
* Improved Shoot-Through FOM 5 6 7 8
H9435S
Hi-Sincerity Mocroelectronics
169.34 KB
P-channel enhancement-mode mosfet.
www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 H94.
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