H9435S, H9435S_Hi P-Channel Enhancement-Mode MOSFET

Hi-Sincerity Mocroelectronics

Description

www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No.: 1/4 H94.

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H9435S Datasheet Preview — This datasheet PDF includes multiple part numbers: H9435S, H9435S_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H9435S, H9435S_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 169.34 KB
Datasheet: H9435S_Hi-SincerityMocroelectronics.pdf
Description: P-Channel Enhancement-Mode MOSFET
Note: This datasheet PDF includes multiple part numbers: H9435S, H9435S_Hi.
Please refer to the document for exact specifications by model.

Features

* RDS(on)=60mΩ@VGS=-10V, ID=-5.3A
* RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A
* Advanced Trench Process Technology
* High Density Cell Design for Ultra Low On-Resistance
* Fully Characterized Avalanche Voltage and Current
* Improved Shoot-Through FOM 5 6 7 8

Applications

* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel:

H9435S Distributors

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H9435S_Hi P-Channel Enhancement-Mode MOSFET Hi-Sincerity Mocroelectronics

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