H9435S, H9435S_Hi - P-Channel Enhancement-Mode MOSFET

Hi-Sincerity Mocroelectronics

Datasheet Details

Part number	H9435S, H9435S_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	169.34 KB
Description	P-Channel Enhancement-Mode MOSFET
Datasheet	H9435S_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: H9435S, H9435S_Hi. Please refer to the document for exact specifications by model.

RDS(on)=60mΩ@VGS=-10V, ID=-5.3A.
RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A.
Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Fully Characterized Avalanche Voltage and Current.
Improved Shoot-Through FOM 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJC RθJA Drain-Source Voltage Ga.

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Published: Oct 27, 2006 |