HBD237, HBD237_Hi Datasheet - Hi-Sincerity Mocroelectronics

HBD237, HBD237_Hi, NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6622-A Issued Date : 1994.09.08 Revised Date : 2000.10.01 Page No.: 1/2 HBD237 NPN EPITAXIAL PLAN.
The HBD237 is designed for medium power linear and switching applications. Maximum Temperatures Storage.

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HBD237_Hi-SincerityMocroelectronics.pdf

HBD237 Datasheet Preview — This datasheet PDF includes multiple part numbers: HBD237, HBD237_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HBD237, HBD237_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

22.82 KB

Description:

NPN EPITAXIAL PLANAR TRANSISTOR

Note:

This datasheet PDF includes multiple part numbers: HBD237, HBD237_Hi.
Please refer to the document for exact specifications by model.

Applications

* Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 25 W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage 100 V BVCE

HBD237 Distributors

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HBD237_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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