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HBD237, HBD237_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

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This datasheet PDF includes multiple part numbers: HBD237, HBD237_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number HBD237, HBD237_Hi
Manufacturer Hi-Sincerity Mocroelectronics
File Size 22.82 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBD237_Hi-SincerityMocroelectronics.pdf
Note This datasheet PDF includes multiple part numbers: HBD237, HBD237_Hi.
Please refer to the document for exact specifications by model.

HBD237 Product details

Description

The HBD237 is designed for medium power linear and switching applications. Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 25 W Maximum Voltages and Currents BVCBO Collector to Base Voltage 100 V BVCEO Collector to Emitter Voltage 80 V BVEBO Emitter to Base Voltage 5 V BVCER Emitter to Base Voltage 100 V IC Collector Curre

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