HBD238, HBD238_Hi Datasheet - Hi-Sincerity Mocroelectronics

HBD238 PNP EPITAXIAL PLANAR TRANSISTOR

The HBD238 is designed for medium power linear and switching applications. Absolute Maximum Ratings (Ta=25°C) * Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 25 W *.

HBD238_Hi-SincerityMocroelectronics.pdf

HBD238 Datasheet Preview — This datasheet PDF includes multiple part numbers: HBD238, HBD238_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HBD238, HBD238_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

22.80 KB

Description:

Pnp epitaxial planar transistor.

Note:

This datasheet PDF includes multiple part numbers: HBD238, HBD238_Hi.
Please refer to the document for exact specifications by model.

HBD238 Distributor

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HBD238 HBD238_Hi PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics