HBD238, HBD238_Hi PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6621-A Issued Date : 1994.09.08 Revised Date : 2000.10.01 Page No.: 1/2 HBD238 PNP EPITAXIAL PLAN.
The HBD238 is designed for medium power linear and switching applications. Maximum Temperatures Storage.

📥 Download Datasheet

HBD238 Datasheet Preview — This datasheet PDF includes multiple part numbers: HBD238, HBD238_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HBD238, HBD238_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 22.80 KB
Datasheet: HBD238_Hi-SincerityMocroelectronics.pdf
Description: PNP EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HBD238, HBD238_Hi.
Please refer to the document for exact specifications by model.

Applications

* Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 25 W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage -100 V BVC

HBD238 Distributors

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HBD238_Hi PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics HBD238-like datasheet