* High DC Current gain: 100-500 at IC=150mA
* Complementary to HE8050S TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 m
HE8550S
Hi-Sincerity Mocroelectronics
54.48 KB
Pnp transistor.
HI-SINCERITY
MICROELECTRONICS CORP.
HE8550S
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6129 Issued Date : 1993.01.15 Revised Date : 2004.07.26 Pag.
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