* High hFE and Excellent Linearity: 200 Typ. hFE(VCE=6.0,IC=1.0mA) Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW
* Maximum
HSA733SP
Hi-Sincerity Mocroelectronics
23.64 KB
Pnp epitaxial planar transistor.
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HSP200204 Issued Date : 1998.01.06 Revised Date : 2002.03.26 Page No. : 1/3
HSA733SP
PNP EPITAXIAL PL.
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