HTIP112

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HTIP112 General Description

The HTIP112 is designed for use in general purpose amplifier and low-speed switching applications. TO-220 Darlington Schematic C Absolute Maximum Ratings (TA=25°C)

* Maximum Temperatures B Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum R1 R2 E

* Maxim.

HTIP112 Datasheet (52.92 KB)

HTIP112 Datasheet Preview — Preview of HTIP112 PDF

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HTIP112

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Hi-Sincerity Mocroelectronics

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52.92 KB

Description:

Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE200203 Issued Date : 2000.08.01 Revised Date : 2004.11.19 P.

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HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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HTIP112 General Description

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