HTIP112, HTIP112_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE200203 Issued Date : 2000.08.01 Revised Date : 2004.11.19 P.
The HTIP112 is designed for use in general purpose amplifier and low-speed switching applications.

📥 Download Datasheet

HTIP112 Datasheet Preview — This datasheet PDF includes multiple part numbers: HTIP112, HTIP112_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HTIP112, HTIP112_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 52.92 KB
Datasheet: HTIP112_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HTIP112, HTIP112_Hi.
Please refer to the document for exact specifications by model.

Applications

* TO-220 Darlington Schematic C Absolute Maximum Ratings (TA=25°C)
* Maximum Temperatures B Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum R1 R2 E
* Maximum Power Dissipation Total Power Dissipation (TC=25°C) 50 W Total Power Dissipation (TA=25°C) 2

HTIP112 Distributors

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HTIP112_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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