H4435S, H4435S_Hi - P-Channel Enhancement-Mode MOSFET

Hi-Sincerity Mocroelectronics

Datasheet Details

Part number	H4435S, H4435S_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	170.63 KB
Description	P-Channel Enhancement-Mode MOSFET
Datasheet	H4435S_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: H4435S, H4435S_Hi. Please refer to the document for exact specifications by model.

RDS(on)=20mΩ@VGS=-10V, ID=-9.1A.
RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A.
Advanced trench process technology.
High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed).
1 o Parameter Ratings -30 ±20 -9.

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Published: Dec 1, 2013 |