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H50N03J, H50N03J_Hi N-Channel MOSFET

H50N03J Description

www.DataSheet4U.net HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No.: 1/5 H50.

H50N03J Features

* RDS(on)=6mΩ@VGS=10V, ID=30A
* RDS(on)=9mΩ@VGS=4.5V, ID=30A
* Advanced trench process technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for DC/DC Converters and Motor Drivers
* Fully Characterized Avalanche Voltage

H50N03J Applications

* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel:

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: H50N03J, H50N03J_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H50N03J, H50N03J_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
92.38 KB
Datasheet
H50N03J_Hi-SincerityMocroelectronics.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: H50N03J, H50N03J_Hi.
Please refer to the document for exact specifications by model.

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