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HE8550S, HE8550S_Hi PNP TRANSISTOR

HE8550S Description

HI-SINCERITY MICROELECTRONICS CORP.HE8550S PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6129 Issued Date : 1993.01.15 Revised Date : 2004.07.26 Pag.
The HE8550S is designed for general purpose amplifier applications. High DC Current gain: 100-500 at IC=150mA. Complement.

HE8550S Features

* High DC Current gain: 100-500 at IC=150mA
* Complementary to HE8050S TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 m

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HE8550S, HE8550S_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HE8550S, HE8550S_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
54.48 KB
Datasheet
HE8550S_Hi-SincerityMocroelectronics.pdf
Description
PNP TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HE8550S, HE8550S_Hi.
Please refer to the document for exact specifications by model.

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PNP TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HE8550S-like datasheet