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HIRF730, HIRF730_Hi N-CHANNEL POWER MOSFET

HIRF730 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200406 Issued Date : 2004.10.01 Revised Date : 2005.04.22 Page No.: 1/4 HIRF730 / HIRF730F N-CHA.
Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.

HIRF730 Features

* Dynamic dv/dt Rating
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 Thermal Characteristics Symbol RθJC RθJA Parameter Th

HIRF730 Applications

* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel:

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HIRF730, HIRF730_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HIRF730, HIRF730_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
81.19 KB
Datasheet
HIRF730_Hi-SincerityMocroelectronics.pdf
Description
N-CHANNEL POWER MOSFET
Note
This datasheet PDF includes multiple part numbers: HIRF730, HIRF730_Hi.
Please refer to the document for exact specifications by model.

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N-CHANNEL POWER MOSFET Hi-Sincerity Mocroelectronics
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