1SS86
Hitachi Semiconductor
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Silicon schottky barrier diode.
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1SS81 - Silicon Diode
(Hitachi Semiconductor)
1SS81
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-148A (Z) Rev. 1 Jul. 1995 Features
• High reverse voltage. (VR = 150V) • High.
1SS82 - Silicon Diode
(Hitachi Semiconductor)
1SS82
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-149A (Z) Rev. 1 Jul. 1995 Features
• High reverse voltage. (VR = 200V) • High.
1SS83 - Silicon Diode
(Hitachi Semiconductor)
1SS83
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-150A (Z) Rev. 1 Jul. 1995 Features
• High reverse voltage. (VR = 250V) • High.
1SS86 - Silicon Schottky Barrier Diode
(Renesas)
1SS86
Silicon Schottky Barrier Diode for UHF TV Tuner Mixer
REJ03G0614-0300 (Previous: ADE-208-186B)
Rev.3.00 May 09, 2005
Features
• Low capacitance..
1SS88 - Silicon Schottky Barrier Diode
(Hitachi Semiconductor)
1SS88
Silicon Schottky Barrier Diode for CATV Balanced Mixer
ADE-208-187A (Z) Rev. 1 Oct. 2000 Features
• Low capacitance. (C = 0.97 pF max) • High r.
1SS101 - SUPER HIGH SPEED SWITCHING DIODE
(XIN SEMICONDUCTOR)
XIN SEMICONDUCTOR
ISO9002
1SS101 THUR 1SS301
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY
FEATURES
For general purpo.
1SS101 - Mixer Diode
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1SS104 - SILICON DIODE
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1SS106 - Silicon Schottky Barrier Diode
(Hitachi Semiconductor)
1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
• Detection efficiency is.
1SS106 - SILICON SCHOTTKY BARRIER DIODE
(SEMTECH)
1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Features • Detection efficiency is very good. • Small temperature coe.