• Part: 1SS82
  • Description: Silicon Diode
  • Category: Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 26.77 KB
Download 1SS82 Datasheet PDF
Hitachi Semiconductor
1SS82
1SS82 is Silicon Diode manufactured by Hitachi Semiconductor.
Features - High reverse voltage. (VR = 200V) - High reliability with glass seal. Ordering Information Type No. 1SS82 Cathode band Verdure 2nd band Light Blue Package Code DO-35 Outline 1 2nd band Cathode band 1. Cathode 2. Anode Absolute Maximum Ratings- 2 (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Symbol VRM- VR I FM I FSM - IO Pd Tj Tstg 2 1 Value 250 200 625 1 200 400 175 - 65 to +175 Unit V V m A A m A m W °C °C Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic. 2. Within 1s forward surge current. Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Symbol VF I R1 I R2 Capacitance Reverse recovery time C t rr Min - - - - - Typ - - - 1.5 - Max 1.0 0.2 100 - 100 p F ns Unit V µA Test Condition I F = 100m A VR = 200V VR = 250V VR = 0V, f = 1MHz I F = IR = 30m A, Irr = 3m A, R L = 100Ω - 1 Forward current I F (A) - 3 - 4 0.8 0.4 0.6 1.0 Forward voltage VF (V) Ta = 12 Ta = 5°C 75° C Ta = 25°C Ta = - 25° C -...