Renesas Electronics 1SS86
Silicon Schottky Barrier Diode
FEATURES
● Low capacitance. (C = 0.85 pF max)● High reliability with glass seal. Ordering Information Type No. 1SS86 Cathode band White 2nd band White Mark H Package Name DO-35 Package Code (Previous Code) GRZZ0002ZB-A (DO-35) Pin Arrangement H 1 2 2nd band Cathode band 1. Cathode 2. Anode Rev.3.00 May 09, 2005 page 1 of 4 1SS86
ABSOLUTE MAXIMUM RATINGS
Item Reverse voltage Average rectified current Power dissipation Junction temperature Storage temperature VR IO Pd Tj Tstg Symbol Value 3 30 150 100 −55 to +100 (Ta = 25°C) Unit V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward current IF Reverse current IR Reverse voltage VR Capacitance C ESD-Capability * — 8 — — mA VF = 0.5 V — — 50 µA VR = 0.5 V 3.0 — — V IR = 1 mA — — 0.85 pF VR = 0.5 V, f = 1 MHz 30 — — V C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Note: Failure criterion ; IR > 50 µA at VR = 0.5 V Rev.3.00 May 09, 2005 page 2 of 4 1SS86 Main Characteristic 10-1 Forward current IF (A) 10-2 10-3 10-4 10-5 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current vs.