Datasheet4U Logo Datasheet4U.com

1SS86 - SILICON SCHOTTKY BARRIER DIODE

Key Features

  • Low capacitance (C = 0.85pF max).
  • High reliability with glass seal. Absolute Maximum Ratings (T a = 25oC) Reverse Voltage Average Forward Current Power Dissipation Junction Temperature Storage Temperature Symbol Value Unit VR 3 V Io 30 mA Ptot 150 mW Tj 100 OC Ts -55 to +100 OC Characteristics at T amb = 25oC Symbol Min. Typ. Max. Unit Forward Current at VF = 0.5V IF 8 - - mA Reverse voltage at IR = 1mA VR 3 - - V Reverse current at VR.

📥 Download Datasheet

Datasheet Details

Part number 1SS86
Manufacturer SEMTECH
File Size 51.86 KB
Description SILICON SCHOTTKY BARRIER DIODE
Datasheet download datasheet 1SS86 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
1SS86 Silicon Schottky Barrier Diode Hitachi Semiconductor
1SS86 Silicon Schottky Barrier Diode Renesas
1SS86 SILICON EPITAXIAL PLANAR DIODES Sunmate
1SS81 Silicon Diode Hitachi Semiconductor
1SS82 Silicon Diode Hitachi Semiconductor

Other Datasheets by SEMTECH

Part Number Description
1SS106 SILICON SCHOTTKY BARRIER DIODE
1SS176 SILICON EPITAXIAL PLANAR DIODE
1SS181 SILICON EPITAXIAL PLANAR DIODE
1SS184 SILICON EPITAXIAL PLANAR DIODE
1SS187 SILICON EPITAXIAL PLANAR DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1SS86 SILICON SCHOTTKY BARRIER DIODE for UHF TV Tuner Mixer Features • Low capacitance (C = 0.85pF max) • High reliability with glass seal. Absolute Maximum Ratings (T a = 25oC) Reverse Voltage Average Forward Current Power Dissipation Junction Temperature Storage Temperature Symbol Value Unit VR 3 V Io 30 mA Ptot 150 mW Tj 100 OC Ts -55 to +100 OC Characteristics at T amb = 25oC Symbol Min. Typ. Max. Unit Forward Current at VF = 0.5V IF 8 - - mA Reverse voltage at IR = 1mA VR 3 - - V Reverse current at VR = 0.5V IR - - 50 µA Capacitance at VR = 0.5V, f = 1MHz ESD-Capability*1 C - - 0.85 pF at C = 200pF,Both forward and - 30 - - V reverse direction 1 pulse Note: 1. Failure criterion; IR/50µA at VR=0.5V РАДИОТЕХ Тел.