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1SS86 Datasheet PDF

Semtech Corporation 1SS86

SILICON SCHOTTKY BARRIER DIODE

Part No. 1SS86
Datasheet 1SS86 Download
Manufacturer
Semtech Corporation
Description SILICON SCHOTTKY BARRIER DIODE
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1SS86 datasheet page 1 preview

FEATURES

● Low capacitance (C = 0.85pF max)
● High reliability with glass seal.

ABSOLUTE MAXIMUM RATINGS

(T a = 25oC) Reverse Voltage Average Forward Current Power Dissipation Junction Temperature Storage Temperature Symbol Value Unit VR 3 V Io 30 mA Ptot 150 mW Tj 100 OC Ts -55 to +100 OC Characteristics at T amb = 25oC Symbol Min. Typ. Max. Unit Forward Current at VF = 0.5V IF 8 - - mA Reverse voltage at IR = 1mA VR 3 - - V Reverse current at VR = 0.5V IR - - 50 µA Capacitance at VR = 0.5V, f = 1MHz ESD-Capability*1 C - - 0.85 pF at C = 200pF,Both forward and - 30 - - V reverse direction 1 pulse Note: 1. Failure criterion; IR/50µA at VR=0.5V РАДИОТЕХ Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: ®