1SS86 Datasheet PDF (SILICON SCHOTTKY BARRIER DIODE)

1SS86 - SILICON SCHOTTKY BARRIER DIODE

Features

Low capacitance (C = 0.85pF max).
High reliability with glass seal. Absolute Maximum Ratings (T a = 25oC) Reverse Voltage Average Forward Current Power Dissipation Junction Temperature Storage Temperature Symbol Value Unit VR 3 V Io 30 mA Ptot 150 mW Tj 100 OC Ts -55 to +100 OC Characteristics at T amb = 25oC Symbol Min. Typ. Max. Unit Forward Current at VF = 0.5V IF 8 - - mA Reverse voltage at IR = 1mA VR 3 - - V Reverse current at VR.

Datasheet Details

Part number	1SS86
Manufacturer	SEMTECH
File Size	51.86 KB
Description	SILICON SCHOTTKY BARRIER DIODE
Datasheet	1SS86 Datasheet

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Full PDF Text Transcription

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1SS86 SILICON SCHOTTKY BARRIER DIODE for UHF TV Tuner Mixer Features • Low capacitance (C = 0.85pF max) • High reliability with glass seal. Absolute Maximum Ratings (T a = 25oC) Reverse Voltage Average Forward Current Power Dissipation Junction Temperature Storage Temperature Symbol Value Unit VR 3 V Io 30 mA Ptot 150 mW Tj 100 OC Ts -55 to +100 OC Characteristics at T amb = 25oC Symbol Min. Typ. Max. Unit Forward Current at VF = 0.5V IF 8 - - mA Reverse voltage at IR = 1mA VR 3 - - V Reverse current at VR = 0.5V IR - - 50 µA Capacitance at VR = 0.5V, f = 1MHz ESD-Capability*1 C - - 0.85 pF at C = 200pF,Both forward and - 30 - - V reverse direction 1 pulse Note: 1. Failure criterion; IR/50µA at VR=0.5V РАДИОТЕХ Тел.

Published: Sep 20, 2025 |