2SC3336 Datasheet - Hitachi Semiconductor

2SC3336 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1.

Base 2.

Collector (Flange) 3.

Emitter 1 2 3 2SC3336 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1.

Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) IB PC Tj Tstg