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2SC4196
Hitachi Semiconductor
52.22 KB
Silicon npn transistor.
2SC4196
Silicon NPN Epitaxial
Application
UHF Local oscillator
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC4196
Absolute Maximum Rating.
📁 Related Datasheet
2SC4196 - Silicon NPN Transistor
(Inchange Semiconductor)
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4196
DESCRIPTION ·Low Noise ·High Gain Bandwidth Product ·100% avalanche tested ·Minimum Lot.
2SC4197 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC4197
Silicon NPN Epitaxial
Application
UHF frequency converter, wide band amplifier
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC4197.
2SC4197 - Silicon NPN Transistor
(Inchange Semiconductor)
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4197
DESCRIPTION ·Low Noise ·High Gain Bandwidth Product ·100% avalanche tested ·Minimum Lot.
2SC4100 - NPN Silicon Transistor
(ROHM)
.
2SC4102 - Silicon Transistor
(GME)
Silicon Epitaxial Planar Transistor
FEATURES
Excellent hFE linearity. Power dissipation:PCM=200mW
Pb
Lead-free
Production specification
2SC4102.
2SC4102 - High-voltage Amplifier Transistor
(Rohm)
2SC4102 / 2SC3906K
High-voltage Amplifier Transistor (120V, 50mA)
Datasheet
Parameter
VCEO IC
Value
120V 50mA
lFeatures
1)High breakdown voltage. .
2SC4102 - High-voltage Amplifier Transistor
(Kexin)
SMD Type
High-voltage Amplifier Transistor 2SC4102
Transistors
Features
High breakdown voltage.(VCEO = 120V)
1 Emitter 2 Base 3 Collector
Absolute.
2SC4102 - TRANSISTOR
(Jin Yu Semiconductor)
2SC4102 TRANSISTOR (NPN)
FEATURES High Breakdown Voltage Complements the 2SA1579 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO .
