* tion resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integ
2SC4197
Hitachi Semiconductor
56.51 KB
Silicon npn transistor.
2SC4197
Silicon NPN Epitaxial
Application
UHF frequency converter, wide band amplifier
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC4197.
📁 Related Datasheet
2SC4196 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC4196
Silicon NPN Epitaxial
Application
UHF Local oscillator
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC4196
Absolute Maximum Rating.
2SC4196 - Silicon NPN Transistor
(Inchange Semiconductor)
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4196
DESCRIPTION ·Low Noise ·High Gain Bandwidth Product ·100% avalanche tested ·Minimum Lot.
2SC4197 - Silicon NPN Transistor
(Inchange Semiconductor)
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4197
DESCRIPTION ·Low Noise ·High Gain Bandwidth Product ·100% avalanche tested ·Minimum Lot.
2SC4100 - NPN Silicon Transistor
(ROHM)
.
2SC4102 - Silicon Transistor
(GME)
Silicon Epitaxial Planar Transistor
FEATURES
Excellent hFE linearity. Power dissipation:PCM=200mW
Pb
Lead-free
Production specification
2SC4102.
2SC4102 - High-voltage Amplifier Transistor
(Rohm)
2SC4102 / 2SC3906K
High-voltage Amplifier Transistor (120V, 50mA)
Datasheet
Parameter
VCEO IC
Value
120V 50mA
lFeatures
1)High breakdown voltage. .
2SC4102 - High-voltage Amplifier Transistor
(Kexin)
SMD Type
High-voltage Amplifier Transistor 2SC4102
Transistors
Features
High breakdown voltage.(VCEO = 120V)
1 Emitter 2 Base 3 Collector
Absolute.
2SC4102 - TRANSISTOR
(Jin Yu Semiconductor)
2SC4102 TRANSISTOR (NPN)
FEATURES High Breakdown Voltage Complements the 2SA1579 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO .
