2SJ479 P-Channel MOSFET

Hitachi Semiconductor

Description

2SJ479(L), 2SJ479(S) Silicon P Channel DV *L MOS FET High Speed Power Switching ADE-208-541 1st.Edition .

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Datasheet Specifications

Part number: 2SJ479
Manufacturer: Hitachi Semiconductor
File Size: 38.52 KB
Datasheet: 2SJ479_HitachiSemiconductor.pdf
Description: P-Channel MOSFET

Features

* Low on-resistance R DS(on) = 25 mΩ typ.
* 4V gate drive devices.
* High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ479(L), 2SJ479(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source v

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2SJ479 P-Channel MOSFET Hitachi Semiconductor

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