2SJ479S - P-Channel MOSFET

Hitachi Semiconductor

Datasheet Details

Part number	2SJ479S
Manufacturer	Hitachi Semiconductor
File Size	38.52 KB
Description	P-Channel MOSFET
Datasheet	2SJ479S_HitachiSemiconductor.pdf

Low on-resistance R DS(on) = 25 mΩ typ.
4V gate drive devices.
High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ479(L), 2SJ479(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25.

📁 2SJ479S Similar Datasheet

Other Datasheets by Hitachi Semiconductor

Published: Mar 30, 2005 |