2SJ479S Datasheet - Hitachi Semiconductor

Features

* Low on-resistance R DS(on) = 25 mΩ typ.

* 4V gate drive devices.

* High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ479(L), 2SJ479(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source v