Part number:
2SJ504
Manufacturer:
Hitachi Semiconductor
File Size:
51.33 KB
Description:
P-channel mosfet.
* Low on-resistance R DS(on) = 0.042Ω typ.
* Low drive current.
* 4V gate drive devices.
* High speed switching. Outline TO
* 220FM D G S 1 2 1. Gate 2. Drain 3. Source 3 2SJ504 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to sou
2SJ504
Hitachi Semiconductor
51.33 KB
P-channel mosfet.
📁 Related Datasheet
2SJ50 - P-Channel MOSFET
(Hitachi Semiconductor)
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its R.
2SJ501 - P-Channel MOSFET
(Sanyo Semicon Device)
Ordering number:ENN5948A
P-Channel Silicon MOSFET
2SJ501
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Ultrahigh-speed swit.
2SJ502 - P-Channel MOSFET
(Sanyo Semicon Device)
Ordering number:ENN6178A
P-Channel Silicon MOSFET
2SJ502
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Ultrahigh-speed swit.
2SJ503 - P-Channel MOSFET
(Sanyo Semicon Device)
Ordering number:ENN5932
P-Channel Silicon MOSFET
2SJ503
DC/DC Converter Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · 4V.
2SJ505 - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ505(L), 2SJ505(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-547 Target specification 1st. Edition Features
• Low on-resistance .
2SJ505L - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ505(L), 2SJ505(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-547 Target specification 1st. Edition Features
• Low on-resistance .
2SJ505S - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ505(L), 2SJ505(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-547 Target specification 1st. Edition Features
• Low on-resistance .
2SJ505S - P-Channel MOSFET
(VBsemi)
2SJ505S-VB
2SJ505S-VB Datasheet P-Channel 60-V (D-S) 175 °C MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 60
0.0065 at VGS = - 10.
