Part number:
2SJ502
Manufacturer:
Sanyo Semicon Device
File Size:
170.07 KB
Description:
P-channel mosfet.
* Low ON-resistance.
* Ultrahigh-speed switching.
* 4V drive. Package Dimensions unit:mm 2091A [2SJ502] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Cu
2SJ502
Sanyo Semicon Device
170.07 KB
P-channel mosfet.
📁 Related Datasheet
2SJ50 - P-Channel MOSFET
(Hitachi Semiconductor)
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its R.
2SJ501 - P-Channel MOSFET
(Sanyo Semicon Device)
Ordering number:ENN5948A
P-Channel Silicon MOSFET
2SJ501
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Ultrahigh-speed swit.
2SJ503 - P-Channel MOSFET
(Sanyo Semicon Device)
Ordering number:ENN5932
P-Channel Silicon MOSFET
2SJ503
DC/DC Converter Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · 4V.
2SJ504 - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ504
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-546 Target specification 1st. Edition Features
• Low on-resistance R DS(on) = 0.0.
2SJ505 - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ505(L), 2SJ505(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-547 Target specification 1st. Edition Features
• Low on-resistance .
2SJ505L - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ505(L), 2SJ505(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-547 Target specification 1st. Edition Features
• Low on-resistance .
2SJ505S - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ505(L), 2SJ505(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-547 Target specification 1st. Edition Features
• Low on-resistance .
2SJ505S - P-Channel MOSFET
(VBsemi)
2SJ505S-VB
2SJ505S-VB Datasheet P-Channel 60-V (D-S) 175 °C MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 60
0.0065 at VGS = - 10.
