2SJ550S Datasheet, Mosfet, Hitachi Semiconductor

2SJ550S Features

  • Mosfet
  • Low on-resistance R DS(on) = 0.075 Ω typ.
  • Low drive current.
  • 4V gate drive devices.
  • High speed switching. Outline LDPAK 4 4 D 1 1 2 3 G 2

PDF File Details

Part number:

2SJ550S

Manufacturer:

Hitachi Semiconductor

File Size:

56.88kb

Download:

📄 Datasheet

Description:

Silicon p-channel mosfet.

Datasheet Preview: 2SJ550S 📥 Download PDF (56.88kb)
Page 2 of 2SJ550S Page 3 of 2SJ550S

2SJ550S Application

  • Applications (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic

TAGS

2SJ550S
Silicon
P-Channel
MOSFET
Hitachi Semiconductor

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2SJ551 - Silicon P-Channel MOSFET (Hitachi Semiconductor)
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2SJ551 - P-Channel MOSFET (Renesas)
2SJ551(L), 2SJ551(S) Silicon P Channel MOS FET Description High speed power switching REJ03G0898-0400 (Previous: ADE-208-647B) Rev.4.00 Sep 07, 2005 .

2SJ551L - Silicon P-Channel MOSFET (Hitachi Semiconductor)
2SJ551(L),2SJ551(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-647B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on).

2SJ551L - P-Channel MOSFET (Renesas)
2SJ551(L), 2SJ551(S) Silicon P Channel MOS FET Description High speed power switching REJ03G0898-0400 (Previous: ADE-208-647B) Rev.4.00 Sep 07, 2005 .

2SJ551S - Silicon P-Channel MOSFET (Hitachi Semiconductor)
2SJ551(L),2SJ551(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-647B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on).

Stock and price

Renesas Electronics Corporation
TRANSISTOR
DigiKey
2SJ550S-E
0 In Stock
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Unit Price : $0
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