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2SJ555 P-Channel MOSFET

2SJ555 Description

2SJ555 Silicon P Channel MOS FET .
High speed power switching Features. Low on-resistance RDS (on) = 0. Low drive current. 4 V gate drive devices.

2SJ555 Features

* Low on-resistance RDS (on) = 0.017 Ω typ.
* Low drive current.
* 4 V gate drive devices.
* High speed switching. Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 G D S REJ03G0902-0300 (Previous: ADE-208-634A) Rev.3.00 Sep 07, 2005 1. Gate 2

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