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2SJ555 Silicon P-Channel MOSFET

2SJ555 Description

2SJ555 Silicon P Channel MOS FET High Speed Power Switching ADE-208-634A (Z) 2nd.Edition Jun 1998 .

2SJ555 Features

* Low on-resistance R DS(on) = 0.017 Ω typ.
* Low drive current.
* 4V gate drive devices.
* High speed switching. Outline TO
* 3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SJ555 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gat

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Datasheet Details

Part number
2SJ555
Manufacturer
Hitachi Semiconductor
File Size
54.29 KB
Datasheet
2SJ555_HitachiSemiconductor.pdf
Description
Silicon P-Channel MOSFET

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Silicon P-Channel MOSFET Hitachi Semiconductor
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